VP0106N3-G

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VP0106N3-G - Microchip
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Краткое описание: P-CH MOSFET, 60V, 0.25A, 8 Ohm, TO-92
Производитель Microchip
Статус производства Производится (ACTIVE)

Дополнительная информация

P-Channel MOSFET, designed for through-hole mounting in a TO-92 package. Features a drain-source breakdown voltage of -60V and a continuous drain current of 250mA. Offers a low on-resistance of 8 Ohms and a maximum power dissipation of 1W. Operates across a wide temperature range from -55°C to 150°C, with fast switching times including 4ns turn-on and fall times.
RoHS Compliant
Mount Through Hole
Width 4.19mm
Height 5.33mm
Length 5.21mm
Weight 0.016oz
Polarity P-CHANNEL
Fall Time 4ns
Packaging Bulk
Rds On Max 8R
Package/Case TO-92
RoHS Compliant Yes
Package Quantity 1000
Input Capacitance 60pF
Power Dissipation 740mW
Number of Channels 1
Number of Elements 1
Turn-On Delay Time 4ns
Radiation Hardening No
Turn-Off Delay Time 8ns
Max Power Dissipation 1W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 8R
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 250mA
Drain to Source Voltage (Vdss) 60V
Drain to Source Breakdown Voltage -60V

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