VP0109N3-G

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VP0109N3-G - Microchip
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Краткое описание: P-CH JFET, 90V, 250mA, 8Ω, TO-92, Through Hole
Производитель Microchip
Статус производства Производится (ACTIVE)

Дополнительная информация

P-CHANNEL JFET with 250mA continuous drain current and -90V drain-to-source breakdown voltage. Features 8Ω drain-to-source resistance and 90V drain-to-source voltage. Operates across a -55°C to 150°C temperature range with 1W maximum power dissipation. Packaged in TO-92 for through-hole mounting.
RoHS Compliant
Mount Through Hole
Width 4.19mm
Height 5.33mm
Length 5.21mm
Weight 0.016oz
Polarity P-CHANNEL
Fall Time 4ns
Packaging Bulk
Rds On Max 8R
Package/Case TO-92
Package Quantity 1000
Input Capacitance 60pF
Power Dissipation 1W
Number of Channels 1
Number of Elements 1
Turn-On Delay Time 4ns
Radiation Hardening No
Turn-Off Delay Time 8ns
Max Power Dissipation 1W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 8R
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 250mA
Drain to Source Voltage (Vdss) 90V
Drain to Source Breakdown Voltage -90V

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