VP1008B

Снят с производства
VP1008B - Vishay(Siliconix)
Краткое описание: P-Channel JFET, 100V, 790mA, 5Ω, TO-39
Производитель Vishay(Siliconix)
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

P-channel JFET with 100V drain-to-source breakdown voltage and 790mA continuous drain current. Features 5Ω drain-to-source resistance, 20V gate-to-source voltage, and 150pF input capacitance. Operates across a -55°C to 150°C temperature range with a maximum power dissipation of 6.25W. Through-hole mounting in a TO-39 package.
RoHS Not CompliantNo
Mount Through Hole
Width 8.15mm
Height 6.6mm
Length 9.4mm
Polarity P-CHANNEL
Fall Time 20ns
Lead Free Contains Lead
Packaging Bulk
Rds On Max 5R
Package/Case TO-39
RoHS Compliant No
Package Quantity 100
Input Capacitance 150pF
Number of Channels 1
Turn-On Delay Time 11ns
Radiation Hardening No
Turn-Off Delay Time 20ns
Max Power Dissipation 6.25W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 5R
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 790mA
Drain to Source Voltage (Vdss) 100V
Drain to Source Breakdown Voltage 100V

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