VP2110K1-G
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Краткое описание:
100V P-CH JFET, 120mA, 12Ω, SOT-23, SM
Дополнительная информация
P-CHANNEL, small signal MOSFET in a TO-236AB (SOT-23) surface mount package. Features 100V drain-to-source breakdown voltage (Vdss), 120mA continuous drain current (ID), and 12 Ohm drain-to-source resistance (Rds On Max). Offers fast switching with 4ns turn-on delay and 5ns fall time, and a 60pF input capacitance. Operates across a -55°C to 150°C temperature range with a maximum power dissipation of 360mW.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.3mm |
| Height | 0.95mm |
| Length | 2.9mm |
| Weight | 0.050717oz |
| Polarity | P-CHANNEL |
| Fall Time | 5ns |
| Packaging | Tape and Reel |
| Rds On Max | 12R |
| Package/Case | SOT-23 |
| Package Quantity | 3000 |
| Input Capacitance | 60pF |
| Power Dissipation | 360mW |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 4ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 5ns |
| Max Power Dissipation | 360mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 12R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 120mA |
| Drain to Source Voltage (Vdss) | 100V |
| Drain to Source Breakdown Voltage | -100V |
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