VP2450N3-G

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VP2450N3-G - Microchip
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Краткое описание: P-CH JFET, 500V, 100mA, 30R, TO-92, Through Hole
Производитель Microchip
Статус производства Производится (ACTIVE)

Дополнительная информация

P-channel JFET with 500V drain-source breakdown voltage and 100mA continuous drain current. Features 30 Ohm drain-source resistance (Rds On Max) and 20V gate-source voltage. Operates across a -55°C to 150°C temperature range with a maximum power dissipation of 740mW. Packaged in a TO-92 through-hole mount for small signal applications.
RoHS Compliant
Mount Through Hole
Width 4.19mm
Height 5.33mm
Length 5.21mm
Weight 0.016oz
Polarity P-CHANNEL
Fall Time 25ns
Packaging Bulk
Rds On Max 30R
Package/Case TO-92
Package Quantity 1000
Input Capacitance 190pF
Power Dissipation 1W
Number of Channels 1
Number of Elements 1
Turn-On Delay Time 10ns
Radiation Hardening No
Turn-Off Delay Time 45ns
Max Power Dissipation 740mW
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 30R
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 100mA
Drain to Source Voltage (Vdss) 500V
Drain to Source Breakdown Voltage -500V

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