VP3203N3-G

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VP3203N3-G - Microchip
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Краткое описание: P-CH JFET, 30V, 650mA, 600mR, TO-92
Производитель Microchip
Статус производства Производится (ACTIVE)

Дополнительная информация

P-CHANNEL JFET with 650mA continuous drain current and 30V drain-to-source breakdown voltage. Features 600mR drain-to-source resistance and 15ns fall time. Operates from -55°C to 150°C with 740mW power dissipation. Packaged in TO-92 for through-hole mounting.
RoHS Compliant
Mount Through Hole
Width 4.19mm
Height 5.33mm
Length 5.21mm
Weight 0.016oz
Polarity P-CHANNEL
Fall Time 15ns
Packaging Bulk
Rds On Max 600mR
Package/Case TO-92
Package Quantity 1000
Input Capacitance 300pF
Power Dissipation 740mW
Number of Channels 1
Number of Elements 1
Turn-On Delay Time 10ns
Radiation Hardening No
Turn-Off Delay Time 25ns
Max Power Dissipation 740mW
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 600mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 650mA
Drain to Source Voltage (Vdss) 30V
Drain to Source Breakdown Voltage -30V

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