VQ1004P
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Краткое описание:
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Дополнительная информация
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
| RoHS | Not CompliantNo |
| Mount | Through Hole |
| Width | 7.87mm |
| Height | 3.05mm |
| Length | 19.56mm |
| Polarity | N-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Package/Case | CDIP |
| RoHS Compliant | No |
| Package Quantity | 25 |
| Power Dissipation | 2W |
| Number of Channels | 4 |
| Radiation Hardening | No |
| Max Power Dissipation | 2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3.5R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 460mA |
| Drain to Source Voltage (Vdss) | 60V |
| Drain to Source Breakdown Voltage | 60V |
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