VQ1006P
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Краткое описание:
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Дополнительная информация
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
| RoHS | Not CompliantNo |
| Mount | Through Hole |
| Weight | 0.042329oz |
| FET Type | 4 N-Channel |
| Polarity | N-CHANNEL |
| Packaging | Rail/Tube |
| Rds On Max | 4.5R |
| Package/Case | PDIP |
| RoHS Compliant | No |
| Package Quantity | 25 |
| Input Capacitance | 60pF |
| Power Dissipation | 2W |
| Number of Channels | 4 |
| Radiation Hardening | No |
| Max Power Dissipation | 2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 4R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 400mA |
| Drain to Source Voltage (Vdss) | 90V |
| Drain to Source Breakdown Voltage | 90V |
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