VS-HOT200C080
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Краткое описание:
80 V 200 A half-bridge MOSFET power module
Дополнительная информация
Half-bridge MOSFET power module integrates 80 V power MOSFETs with current sensing, temperature sensing, a shunt resistor, bypass capacitors, and a C snubber for low EMI. The module uses an insulated transfer-mold FlatPAK HC0 package with an electrically isolated exposed DBC substrate and supports 195 A continuous drain current at 80 °C. It is qualified according to AQG324 guidelines, PPAP capable, and uses UL 94 V-0 certified epoxy compound.
| Type | MOSFET module |
| Weight | 10 typg |
| Package | FlatPAK HC0 |
| Topology | Half bridge inverter |
| Mounting torque | 0.7Nm |
| Gate-source voltage | ±20V |
| Drain-source voltage | 80V |
| Pulsed drain current | 1050A |
| Insulation voltage RMS | 2000V |
| NTC resistance at 25 °C | 10000Ω |
| Internal capacitor voltage | 100V |
| Junction temperature range | -55 to 175°C |
| Q1 on-resistance at 25 °C | 0.45 typ, 0.91 maxmΩ |
| Q2 on-resistance at 25 °C | 0.75 typ, 1.21 maxmΩ |
| Operating temperature range | -40 to 150°C |
| Power dissipation at 25 °C | 194W |
| Internal snubber capacitance | 68 ±10%nF |
| Continuous drain current at 25 °C | 243A |
| Continuous drain current at 80 °C | 195A |
| Package parasitic stray inductance | 10 typnH |
| Continuous drain current at 118 °C | 150A |
| Junction-to-case thermal resistance | 0.77 max°C/W |
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