W3EG6432S265D4I

W3EG6432S265D4I - Microchip
Краткое описание: DRAM Module 256MB DDR2 200SODIMM 266MHz 64-bit
Производитель Microchip

Дополнительная информация

256Mbyte DDR SDRAM DRAM Module, 200-pin USODIMM form factor, operating at a maximum clock rate of 266 MHz with a 64-bit data bus width. Features 32Mx64 organization, 256Mbit chip density, and a maximum access time of 0.75 ns. This unbuffered small outline dual in-line memory module utilizes TSOP chip packaging and operates within a voltage range of 2.3V to 2.7V. Designed for socket mounting, it supports a CAS latency of 2.5 and operates across a temperature range of -40°C to 85°C.
PCB 200
ECCN 4A994.a
PPAP No
EU RoHS No
HTS Code 8473301140
Mounting Socket
Cage Code 60991
Pin Count 200
Automotive No
Lead Shape No Lead
Schedule B 8473300002
CAS Latency 2.5
ECC Support No
Module Type 200SODIMM
Subcategory DDR SDRAM
Chip Density 256Mbit
Organization 32Mx64
Package/Case USODIMM
AEC Qualified No
Main Category DRAM Module
RoHS Versions 2011/65/EU, 2015/863
Total Density 256Mbyte
Data Bus Width 64bit
Chip Package Type TSOP
Basic Package Type Non-Lead-Frame SMT
Chip Configuration 32Mx8
Maximum Clock Rate 266MHz
Package Width (mm) 3.81(Max)
Maximum Access Time 0.75ns
Package Description Unbuffered Small Outline Dual In Line Memory Module
Package Family Name DIM
Package Height (mm) 31.75
Package Length (mm) 67.56(Max)
Max Operating Temperature 85°C
Maximum Operating Current 2800mA
Min Operating Temperature -40°C
Number of Chip per Module 8
Max Operating Supply Voltage 2.7V
Min Operating Supply Voltage 2.3V
Typical Operating Supply Voltage 2.5V

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