WP3A10SF6BT
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Краткое описание:
3mm, 1 ELEMENT, INFRARED LED, 860nm, ROHS COMPLIANT PACKAGE-2
Дополнительная информация
T-1 3 mm infrared emitting diode uses a Gallium Aluminum Arsenide die with a blue transparent lens. The emitter has an 860 nm peak spectral wavelength, 50 nm spectral bandwidth, and a 50 degree viewing angle. Radiant intensity is rated at 7 mW/sr minimum and 15 mW/sr typical at 20 mA. The diode supports 50 mA DC forward current, 80 mW power dissipation, and operation from -40 °C to +85 °C. The package is RoHS compliant.
| RoHS | Yes |
| REACH | Compliant |
| HTS Code | 8541.40.20.00 |
| LED Type | Infrared emitting diode |
| Eccn Code | EAR99 |
| Lens Type | Blue transparent |
| Package Size | 3mm |
| Dice Material | SF6 (GaAlAs) |
| Military Spec | False |
| Viewing Angle | 50° |
| Reverse Voltage | 5V |
| Power Dissipation | 80mW |
| DC Forward Current | 50mA |
| Spectral Bandwidth | 50nm |
| Capacitance Typical | 30pF |
| Storage Temperature | -40 to +85°C |
| Peak Forward Current | 1A |
| Operating Temperature | -40 to +85°C |
| Forward Voltage Maximum | 1.6V |
| Forward Voltage Typical | 1.35V |
| Reverse Current Maximum | 10uA |
| Peak Spectral Wavelength | 860nm |
| Reverse Current Test Voltage | 5V |
| Radiant Intensity Minimum at 20 mA | 7mW/sr |
| Radiant Intensity Minimum at 50 mA | 10mW/sr |
| Radiant Intensity Typical at 20 mA | 15mW/sr |
| Radiant Intensity Typical at 50 mA | 40mW/sr |
| Lead Solder Temperature 2 mm Below Package Base | 260 for 3 seconds°C |
| Lead Solder Temperature 5 mm Below Package Base | 260 for 5 seconds°C |
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