ZDT1053TA
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NPN BJT Transistor, 75V VCEO, 5A IC, 140MHz, SMD
Дополнительная информация
NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 75V Collector-Emitter Breakdown Voltage (VCEO) and a 5A Continuous Collector Current. Operates with a 140MHz Gain Bandwidth Product and a 2.75W Max Power Dissipation. Packaged in SMD/SMT for surface mounting, this lead-free and RoHS compliant component offers a wide operating temperature range from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.7mm |
| Height | 1.6mm |
| Length | 6.7mm |
| Polarity | NPN |
| Frequency | 140MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SMD/SMT |
| Max Frequency | 140MHz |
| Current Rating | 5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 75V |
| Package Quantity | 1000 |
| Power Dissipation | 2.75W |
| Number of Elements | 2 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 140MHz |
| Max Breakdown Voltage | 75V |
| Max Collector Current | 5A |
| Max Power Dissipation | 2.75W |
| Gain Bandwidth Product | 140MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | 5A |
| Collector Base Voltage (VCBO) | 150V |
| Collector-emitter Voltage-Max | 440mV |
| Collector Emitter Voltage (VCEO) | 75V |
| Collector Emitter Breakdown Voltage | 75V |
| Collector Emitter Saturation Voltage | 440mV |
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