ZDT6753TA
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Краткое описание:
NPN/PNP BJT Transistor, 2A, 100V, 175MHz, SMD
Дополнительная информация
Dual-element NPN/PNP silicon bipolar junction transistor for surface mount applications. Features a 2A continuous collector current, 100V collector-emitter breakdown voltage, and 120V collector-base voltage. Operates with a 6V emitter-base voltage and exhibits a low 230mV collector-emitter saturation voltage. Offers a transition frequency of 140MHz and a gain bandwidth product of 175MHz. Packaged in an 8-pin SM-8 plastic/epoxy package, this lead-free and RoHS compliant component supports a wide operating temperature range from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.7mm |
| Height | 1.6mm |
| Length | 6.7mm |
| Polarity | NPN, PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SMD/SMT |
| Max Frequency | 175MHz |
| Current Rating | 2A |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 140MHz |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 2A |
| Max Power Dissipation | 2.75W |
| Gain Bandwidth Product | 175MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 6V |
| Continuous Collector Current | 2A |
| Collector Base Voltage (VCBO) | 120V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 230mV |
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