ZDT694TA
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Краткое описание:
NPN BJT, 120V VCEO, 500mA IC, 130MHz FT, 2-Element, SM-8
Дополнительная информация
NPN silicon bipolar junction transistor, 2-element configuration, designed for surface mount applications. Features a 120V collector-emitter breakdown voltage (VCEO) and a maximum collector current of 500mA. Operates with a transition frequency of 130MHz and a maximum power dissipation of 2.75W. Packaged in SM-8, 8-pin plastic/epoxy housing, this RoHS and REACH SVHC compliant component offers a wide operating temperature range from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.7mm |
| Height | 1.6mm |
| Length | 6.7mm |
| Polarity | NPN |
| Frequency | 130MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SMD/SMT |
| Current Rating | 500mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 120V |
| Package Quantity | 1000 |
| Power Dissipation | 2.75W |
| Number of Elements | 2 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 130MHz |
| Max Breakdown Voltage | 120V |
| Max Collector Current | 500mA |
| Max Power Dissipation | 2.75W |
| Gain Bandwidth Product | 130MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 120V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Voltage (VCEO) | 120V |
| Collector Emitter Breakdown Voltage | 120V |
| Collector Emitter Saturation Voltage | 500mV |
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