ZTX1048A

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ZTX1048A - Diodes
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Краткое описание: NPN BJT Transistor, 4A I(C), 17.5V V(CE), 150MHz, TO-92
Производитель Diodes
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 4A continuous collector current and a 17.5V collector-emitter breakdown voltage. Operates with a 150MHz transition frequency and offers a minimum DC current gain (hFE) of 300. Packaged in a TO-92 compatible E-LINE package, suitable for through-hole mounting. Rated for a maximum power dissipation of 1W and operates across a temperature range of -55°C to 200°C.
RoHS Compliant
Mount Through Hole
Width 2.41mm
Height 4.01mm
Length 4.77mm
Weight 0.016oz
hFE Min 300
Polarity NPN
Frequency 150MHz
Lead Free Lead Free
Packaging Bulk
Package/Case TO-92
Current Rating 4A
RoHS Compliant Yes
DC Rated Voltage 17.5V
Package Quantity 4000
Power Dissipation 1W
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 150MHz
Max Collector Current 4A
Max Power Dissipation 1W
Gain Bandwidth Product 150MHz
Max Operating Temperature 200°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 4A
Collector Base Voltage (VCBO) 50V
Collector-emitter Voltage-Max 245mV
Collector Emitter Voltage (VCEO) 17.5V
Collector Emitter Breakdown Voltage 17.5V

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