ZTX1049ASTZ

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ZTX1049ASTZ - Diodes
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Краткое описание: NPN BJT Transistor, 25V VCEO, 4A IC, 180MHz, TO-226
Производитель Diodes
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN Bipolar Junction Transistor (BJT) for small signal applications, featuring a continuous collector current of 4A and a collector-emitter voltage (VCEO) of 25V. This through-hole component offers a minimum DC current gain (hFE) of 300 and a transition frequency of 180MHz. It operates within a temperature range of -55°C to 200°C and has a maximum power dissipation of 1W. Packaged in TO-226-3, it is RoHS and REACH SVHC compliant.
RoHS Compliant
Mount Through Hole
Width 2.41mm
Height 4.01mm
Length 4.77mm
Weight 0.016oz
hFE Min 300
Polarity NPN
Frequency 180MHz
Lead Free Lead Free
Packaging Tape and Reel
Package/Case TO-226-3
Current Rating 4A
RoHS Compliant Yes
DC Rated Voltage 25V
Package Quantity 2000
Power Dissipation 1W
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant Yes
Transition Frequency 180MHz
Max Breakdown Voltage 25V
Max Collector Current 4A
Max Power Dissipation 1W
Gain Bandwidth Product 180MHz
Max Operating Temperature 200°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 4A
Collector Base Voltage (VCBO) 80V
Collector-emitter Voltage-Max 220mV
Collector Emitter Voltage (VCEO) 25V
Collector Emitter Breakdown Voltage 25V
Collector Emitter Saturation Voltage 220mV

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