ZTX551
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Краткое описание:
PNP BJT Transistor, 60V VCEO, 1A IC, 150MHz, TO-92
Дополнительная информация
PNP bipolar junction transistor featuring a 60V collector-emitter breakdown voltage and 1A continuous collector current. This silicon transistor offers a 150MHz gain bandwidth product and a maximum power dissipation of 1W. Packaged in a TO-92 E-LINE package for through-hole mounting, it operates across a temperature range of -55°C to 200°C.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.41mm |
| Height | 4.01mm |
| Length | 4.77mm |
| Weight | 0.016oz |
| Polarity | PNP |
| Frequency | 150MHz |
| Packaging | Bulk |
| Package/Case | TO-92 |
| Max Frequency | 150MHz |
| Current Rating | -1A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -60V |
| Package Quantity | 4000 |
| Power Dissipation | 1W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 150MHz |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 1A |
| Max Power Dissipation | 1W |
| Gain Bandwidth Product | 150MHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | -1A |
| Collector Base Voltage (VCBO) | 80V |
| Collector-emitter Voltage-Max | 350mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | -350mV |
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