ZTX605
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Краткое описание:
NPN BJT Transistor 120V 1A 1W 150MHz TO-92
Дополнительная информация
NPN Bipolar Junction Transistor (BJT) featuring a Darlington configuration. This through-hole component offers a 120V collector-emitter breakdown voltage and a 1A continuous collector current. Maximum power dissipation is 1W, with a transition frequency of 150MHz. The device operates within a temperature range of -55°C to 200°C and is housed in a 3-pin E-Line TO-92 package.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.41mm |
| Height | 4.01mm |
| Length | 4.77mm |
| Weight | 0.016oz |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Package/Case | TO-92 |
| Current Rating | 1A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 120V |
| Package Quantity | 4000 |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 150MHz |
| Max Collector Current | 1A |
| Max Power Dissipation | 1W |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 10V |
| Continuous Collector Current | 1A |
| Collector Base Voltage (VCBO) | 140V |
| Collector-emitter Voltage-Max | 1.5V |
| Collector Emitter Voltage (VCEO) | 120V |
| Collector Emitter Breakdown Voltage | 120V |
| Collector Emitter Saturation Voltage | 1V |
