ZTX649
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NPN BJT Transistor, 2A I(C), 25V V(BR)CEO, TO-92
Дополнительная информация
NPN Silicon Bipolar Junction Transistor (BJT) in a TO-92 E-LINE package. Features a 2A continuous collector current, 25V collector-emitter breakdown voltage (VCEO), and 35V collector-base voltage (VCBO). Offers a 230mV collector-emitter saturation voltage and a 240MHz transition frequency. Operates within a -55°C to 200°C temperature range with 1W maximum power dissipation. Through-hole mount, RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.41mm |
| Height | 4.01mm |
| Length | 4.77mm |
| Weight | 0.016oz |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Package/Case | TO-92 |
| Current Rating | 2A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 25V |
| Package Quantity | 4000 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 240MHz |
| Max Collector Current | 2A |
| Max Power Dissipation | 1W |
| Gain Bandwidth Product | 240MHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | 2A |
| Collector Base Voltage (VCBO) | 35V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Voltage (VCEO) | 25V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Saturation Voltage | 230mV |
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