ZTX688BSTZ
Производится
Увеличить
Краткое описание:
NPN BJT Transistor, 3A I(C), 150MHz f(T), TO-92
Дополнительная информация
NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a continuous collector current of 3A, a collector-emitter breakdown voltage of 12V, and a transition frequency of 150MHz. Housed in a TO-92 compatible E-LINE package, this through-hole component offers a maximum power dissipation of 1W and operates across a wide temperature range from -55°C to 200°C. It is RoHS and REACH SVHC compliant, supplied in tape and reel packaging.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.41mm |
| Height | 4.01mm |
| Length | 4.77mm |
| Weight | 0.016oz |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | TO-92 |
| Max Frequency | 150MHz |
| Current Rating | 3A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 12V |
| Package Quantity | 2000 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 150MHz |
| Max Collector Current | 3A |
| Max Power Dissipation | 1W |
| Gain Bandwidth Product | 150MHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | 3A |
| Collector Base Voltage (VCBO) | 12V |
| Collector-emitter Voltage-Max | 350mV |
| Collector Emitter Breakdown Voltage | 12V |
| Collector Emitter Saturation Voltage | 350mV |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
