ZTX694B

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ZTX694B - Diodes
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Краткое описание: NPN BJT Transistor, 120V VCEO, 500mA IC, 130MHz, TO-92
Производитель Diodes
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN bipolar junction transistor featuring a 120V collector-emitter breakdown voltage and 500mA continuous collector current. This silicon transistor offers a 130MHz transition frequency and a maximum power dissipation of 1W. Designed for through-hole mounting, it utilizes a TO-92 compatible E-LINE package with three leads. Operating temperature range spans from -55°C to 200°C, with a lead-free and RoHS compliant construction.
RoHS Compliant
Mount Through Hole
Width 2.41mm
Height 4.01mm
Length 4.77mm
Weight 0.016oz
Polarity NPN
Frequency 130MHz
Lead Free Lead Free
Packaging Bulk
Package/Case TO-92
Max Frequency 130MHz
Current Rating 500mA
RoHS Compliant Yes
DC Rated Voltage 120V
Package Quantity 4000
Power Dissipation 1W
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 130MHz
Max Collector Current 500mA
Max Power Dissipation 1W
Gain Bandwidth Product 130MHz
Max Operating Temperature 200°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 500mA
Collector Base Voltage (VCBO) 120V
Collector-emitter Voltage-Max 500mV
Collector Emitter Voltage (VCEO) 120V
Collector Emitter Breakdown Voltage 120V
Collector Emitter Saturation Voltage 500mV

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