ZTX757STZ
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PNP BJT Transistor, 300V, 0.5A, TO-92, 30MHz
Дополнительная информация
PNP Bipolar Junction Transistor (BJT) for small signal applications. Features a 300V Collector-Emitter Breakdown Voltage (V(BR)CEO) and a continuous collector current of -500mA. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1W. Packaged in a TO-92 compatible E-LINE package, suitable for through-hole mounting. This silicon transistor offers a gain bandwidth product of 30MHz and is lead-free and RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.41mm |
| Height | 4.01mm |
| Length | 4.77mm |
| Weight | 0.016oz |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | TO-92 |
| Current Rating | -500mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | -300V |
| Package Quantity | 2000 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 30MHz |
| Max Collector Current | 500mA |
| Max Power Dissipation | 1W |
| Gain Bandwidth Product | 30MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -5V |
| Continuous Collector Current | -500mA |
| Collector Base Voltage (VCBO) | -300V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Breakdown Voltage | 300V |
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