ZUMT718TA

Производится
ZUMT718TA - Diodes
Увеличить
Краткое описание: PNP BJT Transistor, 1A, 20V, 210MHz, SOT-323
Производитель Diodes
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 20V Collector-Emitter Voltage (VCEO) and a 1A Continuous Collector Current. Operates with a -1A current rating and a 210MHz Gain Bandwidth Product. Packaged in a SOT-323 surface mount case, this RoHS and Lead Free component offers a maximum power dissipation of 500mW and an operating temperature range of -55°C to 150°C.
RoHS Compliant
Mount Surface Mount
Width 1.26mm
Height 1mm
Length 2.2mm
Weight 0.000212oz
Polarity PNP
Frequency 210MHz
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SOT-323
Max Frequency 210MHz
Current Rating -1A
RoHS Compliant Yes
DC Rated Voltage -20V
Package Quantity 3000
Power Dissipation 500mW
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant Yes
Transition Frequency 210MHz
Max Breakdown Voltage 20V
Max Collector Current 1A
Max Power Dissipation 500mW
Gain Bandwidth Product 210MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) -5V
Continuous Collector Current -1A
Collector Base Voltage (VCBO) 20V
Collector-emitter Voltage-Max 250mV
Collector Emitter Voltage (VCEO) 20V
Collector Emitter Breakdown Voltage 20V
Collector Emitter Saturation Voltage -180mV

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.