ZVN2106A
Снят с производства
Увеличить
Краткое описание:
N-Channel JFET, 60V, 450mA, TO-92, Through Hole
Дополнительная информация
N-channel Silicon Field-Effect Transistor (FET) designed for small signal applications. Features a 60V Drain-to-Source Voltage (Vdss) and a continuous drain current (ID) of 450mA. This single-element JFET offers a low Drain-Source On-Resistance (Rds On) of 2 Ohms. Packaged in a TO-92 compatible E-Line package, it supports through-hole mounting. Operating temperature range spans from -55°C to 150°C with a maximum power dissipation of 700mW.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.41mm |
| Height | 4.01mm |
| Length | 4.77mm |
| Weight | 0.016oz |
| Polarity | N-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Rds On Max | 2R |
| Package/Case | TO-92-3 |
| Current Rating | 450mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 4000 |
| Input Capacitance | 75pF |
| Power Dissipation | 700mW |
| Threshold Voltage | 2.4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 700mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 2R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 450mA |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 2R |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
