ZVN2110A
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Краткое описание:
N-Channel JFET, 100V, 320mA, TO-92, Through Hole
Дополнительная информация
N-Channel Silicon Metal-Oxide Semiconductor FET, a single-element JFET designed for general-purpose switching and amplification. Features a 100V Drain-Source Breakdown Voltage (Vdss) and a continuous drain current (ID) of 320mA. Offers a low Drain-Source On-Resistance (Rds On) of 4 Ohms. Operates within a temperature range of -55°C to 150°C and is housed in a TO-92 compatible E-Line package. This through-hole component boasts fast switching times with a turn-on delay of 7ns and a fall time of 8ns.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.41mm |
| Height | 4.01mm |
| Length | 4.77mm |
| Weight | 0.016oz |
| Polarity | N-CHANNEL |
| Fall Time | 8ns |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Rds On Max | 4R |
| Package/Case | TO-92-3 |
| Current Rating | 230mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Package Quantity | 4000 |
| Input Capacitance | 75pF |
| Threshold Voltage | 2.4V |
| Number of Channels | 1 |
| Turn-On Delay Time | 7ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 13ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 700mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 4R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 320mA |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 4R |
| Drain to Source Breakdown Voltage | 100V |
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