ZVN2110GTA
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Краткое описание:
N-Channel MOSFET, 100V, 0.5A, 4R, SOT-223
Дополнительная информация
N-Channel Silicon Metal-Oxide Semiconductor FET, a single-element power transistor with a 100V drain-to-source breakdown voltage and 500mA continuous drain current. Features a low 4-ohm drain-to-source on-resistance, 2W maximum power dissipation, and operates within a -55°C to 150°C temperature range. Packaged in a SOT-223 surface-mount case, this component offers fast switching with turn-on delay of 4ns and fall time of 8ns. It is RoHS and Lead-Free compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.7mm |
| Height | 1.65mm |
| Length | 6.7mm |
| Weight | 0.000282oz |
| Polarity | N-CHANNEL |
| Fall Time | 8ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 4R |
| Package/Case | SOT-223 |
| Current Rating | 500mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Package Quantity | 1 |
| Input Capacitance | 75pF |
| Power Dissipation | 2W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 4ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 8ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 4R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 500mA |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 4R |
| Drain to Source Breakdown Voltage | 100V |
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