ZVN3310ASTOB
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Краткое описание:
N-Channel JFET, 100V, 200mA, TO-92, Through Hole
Дополнительная информация
N-Channel Silicon Metal-oxide Semiconductor FET, a single-element JFET, offers a 100V drain-to-source voltage (Vdss) and a continuous drain current (ID) of 200mA. Featuring a low drain-to-source resistance (Rds On Max) of 10 Ohms, this through-hole mount component is housed in a TO-92-3 compatible E-LINE package. Key performance specifications include a 5ns turn-on delay, 6ns turn-off delay, and 7ns fall time, with input capacitance at 40pF. Maximum power dissipation is rated at 625mW, operating across a temperature range of -55°C to 150°C.
| RoHS | Not Compliant |
| Mount | Through Hole |
| Weight | 0.016oz |
| Polarity | N-CHANNEL |
| Fall Time | 7ns |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Rds On Max | 10R |
| Package/Case | TO-92-3 |
| Current Rating | 200mA |
| RoHS Compliant | No |
| DC Rated Voltage | 100V |
| Package Quantity | 4000 |
| Input Capacitance | 40pF |
| Power Dissipation | 625mW |
| Number of Channels | 1 |
| Turn-On Delay Time | 5ns |
| Turn-Off Delay Time | 6ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 625mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 10R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 200mA |
| Drain to Source Voltage (Vdss) | 100V |
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