ZVN3310FTA
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Краткое описание:
N-Channel JFET, 100V, 100mA, 10 Ohm, SOT-23
Дополнительная информация
N-Channel Silicon Metal-oxide Semiconductor FET, a single-element JFET designed for small signal applications. Features a 100V Drain to Source Voltage (Vdss) and a continuous drain current (ID) of 100mA. Offers a low Drain to Source On Resistance (Rds On) of 10 Ohms. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 330mW. Packaged in a SOT-23 surface mount case, this RoHS compliant component is supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.02mm |
| Length | 3.04mm |
| Weight | 0.000282oz |
| Current | 100mA |
| Voltage | 100V |
| Polarity | N-CHANNEL |
| Fall Time | 5ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 10R |
| Nominal Vgs | 2.4V |
| Termination | SMD/SMT |
| Package/Case | SOT-23 |
| Current Rating | 100mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Package Quantity | 1 |
| Input Capacitance | 40pF |
| Power Dissipation | 330mW |
| Threshold Voltage | 2.4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 3ns |
| Dual Supply Voltage | 100V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 4ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 330mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 10R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 100mA |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 10R |
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