ZVN3320FTA
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Краткое описание:
N-Channel JFET, 200V, 60mA, 25R, SOT-23, Surface Mount
Дополнительная информация
N-Channel Silicon Metal-oxide Semiconductor FET for small signal applications. Features a 200V drain-source voltage (Vdss) and 60mA continuous drain current (ID). Offers a low drain-source on-resistance (Rds On) of 25 Ohms. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 330mW. Packaged in a SOT-23 surface mount case, supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.02mm |
| Length | 3.04mm |
| Weight | 0.000282oz |
| Polarity | N-CHANNEL |
| Fall Time | 7ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 25R |
| Package/Case | SOT-23 |
| Current Rating | 60mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 200V |
| Package Quantity | 3000 |
| Input Capacitance | 45pF |
| Power Dissipation | 330mW |
| Threshold Voltage | 1V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 6ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 330mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 25R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 60mA |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 25R |
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