ZVN4106FTA
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Краткое описание:
N-Channel JFET, 60V, 200mA, 5R, SOT-23-3
Дополнительная информация
N-channel silicon JFET for small signal applications. Features 60V drain-source voltage (Vdss) and 200mA continuous drain current (ID). Offers a low drain-source on-resistance (Rds On) of 5 Ohms. Operates across a wide temperature range from -55°C to 150°C. Packaged in a compact SOT-23-3 surface-mount case.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.02mm |
| Length | 3.04mm |
| Weight | 0.000282oz |
| Polarity | N-CHANNEL |
| Fall Time | 7ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 2.5R |
| Package/Case | SOT-23-3 |
| Current Rating | 200mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 3000 |
| Input Capacitance | 35pF |
| Power Dissipation | 350mW |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 6ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 330mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 5R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 200mA |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 5R |
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