ZVN4206A
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Краткое описание:
N-Channel JFET, 60V, 600mA, 1R Rds(on), TO-92
Дополнительная информация
N-Channel Silicon Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) for small signal applications. Features 60V drain-to-source breakdown voltage and 600mA continuous drain current. Offers a maximum drain-source on-resistance of 1 Ohm. Packaged in a TO-92-3 configuration for through-hole mounting. Operates within a temperature range of -55°C to 150°C with 700mW power dissipation.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.41mm |
| Height | 4.01mm |
| Length | 4.77mm |
| Weight | 0.016oz |
| Polarity | N-CHANNEL |
| Fall Time | 12ns |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Rds On Max | 1R |
| Package/Case | TO-92-3 |
| Current Rating | 600mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 4000 |
| Input Capacitance | 100pF |
| Power Dissipation | 700mW |
| Threshold Voltage | 3V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 12ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 700mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.5R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 600mA |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 1R |
| Drain to Source Breakdown Voltage | 60V |
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