ZVN4206AVSTOA

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ZVN4206AVSTOA - Diodes
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Краткое описание: N-CH MOSFET 60V 600mA TO-92-3 1.5R
Производитель Diodes
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel MOSFET with 60V drain-source breakdown voltage and 600mA continuous drain current. Features a low Rds(on) of 1 Ohm, 8ns turn-on delay, and 12ns fall time. This through-hole component is housed in a TO-92-3 package, offering a maximum power dissipation of 700mW and operating temperature range of -55°C to 150°C.
RoHS Compliant
Mount Through Hole
Weight 0.016oz
Polarity N-CHANNEL
Fall Time 12ns
Lead Free Lead Free
Packaging Bulk
Rds On Max 1R
Package/Case TO-92-3
Current Rating 600mA
DC Rated Voltage 60V
Package Quantity 4000
Input Capacitance 100pF
Power Dissipation 700mW
Number of Channels 1
Turn-On Delay Time 8ns
Turn-Off Delay Time 12ns
Reach SVHC Compliant Yes
Max Power Dissipation 700mW
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 1.5R
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 600mA
Drain to Source Voltage (Vdss) 60V
Drain to Source Breakdown Voltage 60V

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