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Краткое описание:
N-Channel MOSFET, 60V, 600mA, TO-92, Through Hole
Дополнительная информация
N-channel MOSFET transistor in a TO-92-3 package, featuring a 60V drain-source voltage (Vdss) and a continuous drain current (ID) of 600mA. Offers a maximum drain-source on-resistance (Rds On Max) of 1 Ohm, with a typical fall time of 12ns and turn-on delay time of 8ns. Designed for through-hole mounting, this component operates across a temperature range of -55°C to 150°C and has a maximum power dissipation of 700mW. It is RoHS and REACH SVHC compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.41mm |
| Height | 4.01mm |
| Length | 4.77mm |
| Weight | 0.016oz |
| Polarity | N-CHANNEL |
| Fall Time | 12ns |
| Lead Free | Lead Free |
| Packaging | Cut Tape |
| Rds On Max | 1R |
| Package/Case | TO-92-3 |
| Current Rating | 600mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 2000 |
| Input Capacitance | 100pF |
| Number of Channels | 1 |
| Turn-On Delay Time | 8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 12ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 700mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.5R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 600mA |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 1R |
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