ZVN4206GVTA
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Краткое описание:
N-Channel MOSFET, 60V, 1A, 1Ω, SOT-223, Surface Mount
Дополнительная информация
N-Channel MOSFET, 60V Vdss, 1A continuous drain current, and 1 Ohm Rds On Max. This silicon Metal-oxide Semiconductor FET features a 1.3V threshold voltage, 8ns turn-on delay, and 15ns fall time. Designed for surface mounting in a SOT-223 package, it offers a maximum power dissipation of 2W and operates within a temperature range of -55°C to 150°C. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.7mm |
| Height | 1.65mm |
| Length | 6.7mm |
| Weight | 0.000282oz |
| Polarity | N-CHANNEL |
| Fall Time | 15ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 1R |
| Package/Case | SOT-223 |
| Current Rating | 1A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 1000 |
| Input Capacitance | 100pF |
| Threshold Voltage | 1.3V |
| Number of Channels | 1 |
| Turn-On Delay Time | 8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 12ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.5R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 1A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 1R |
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