ZVN4210GTA
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N-Channel MOSFET, 100V, 0.8A, 1.8R, SOT-223
Дополнительная информация
N-Channel Power MOSFET, 100V Drain-Source Breakdown Voltage, 800mA Continuous Drain Current, and 1.8 Ohm Max Drain-Source On-Resistance. This single-element silicon Metal-Oxide-Semiconductor FET features a SOT-223 package for surface mounting, with a maximum power dissipation of 2W. Operating temperature range is -55°C to 150°C, with a Gate-to-Source Voltage of 20V and a Threshold Voltage of 800mV. Turn-on delay is 4ns, turn-off delay is 20ns, and fall time is 30ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.7mm |
| Height | 1.65mm |
| Length | 6.7mm |
| Weight | 0.000282oz |
| Polarity | N-CHANNEL |
| Fall Time | 30ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 1.5R |
| Package/Case | SOT-223 |
| Current Rating | 800mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Package Quantity | 1000 |
| Input Capacitance | 100pF |
| Power Dissipation | 2W |
| Threshold Voltage | 800mV |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 4ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 20ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.8R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 800mA |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 1.8R |
| Drain to Source Breakdown Voltage | 100V |
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