ZVN4306A
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N-Channel JFET, 60V, 1.1A, TO-92, Through Hole
Дополнительная информация
N-Channel JFET for small signal applications, featuring a 60V drain-source breakdown voltage and 1.1A continuous drain current. This silicon MOSFET offers a maximum drain-source on-resistance of 330mR and a threshold voltage of 3V. Designed for through-hole mounting, it comes in a TO-92 compatible E-Line package with a 3-lead configuration. Operating across a wide temperature range of -55°C to 150°C, this RoHS compliant component boasts fast switching times with turn-on delay at 8ns and fall time at 25ns.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.41mm |
| Height | 4.01mm |
| Length | 4.77mm |
| Weight | 0.016oz |
| Polarity | N-CHANNEL |
| Fall Time | 25ns |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Rds On Max | 330mR |
| Package/Case | TO-92-3 |
| Current Rating | 1.1A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 4000 |
| Input Capacitance | 350pF |
| Threshold Voltage | 3V |
| Number of Channels | 1 |
| Turn-On Delay Time | 8ns |
| Turn-Off Delay Time | 30ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 850mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 450mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 1.1A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 330mR |
| Drain to Source Breakdown Voltage | 60V |
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