ZVN4306ASTOA
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Краткое описание:
N-Channel JFET, 60V, 1.1A, TO-92, Through Hole
Дополнительная информация
N-Channel JFET with 60V Drain-to-Source Voltage (Vdss) and 1.1A Continuous Drain Current (ID). Features 450mR Drain-to-Source Resistance (Rds On Max 330mR) and 20V Gate-to-Source Voltage (Vgs). This silicon MOSFET offers fast switching with turn-on delay of 8ns and fall time of 25ns. Packaged in a TO-92 compatible E-Line package for through-hole mounting, it operates from -55°C to 150°C with 850mW power dissipation. RoHS and Lead-Free compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.41mm |
| Height | 4.01mm |
| Length | 4.77mm |
| Weight | 0.016oz |
| Polarity | N-CHANNEL |
| Fall Time | 25ns |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Rds On Max | 330mR |
| Package/Case | TO-92-3 |
| Current Rating | 1.1A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 2000 |
| Input Capacitance | 350pF |
| Power Dissipation | 850mW |
| Number of Channels | 1 |
| Turn-On Delay Time | 8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 30ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 850mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 450mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 1.1A |
| Drain to Source Voltage (Vdss) | 60V |
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