ZVN4310A

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ZVN4310A - Diodes
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Краткое описание: N-Channel JFET, 100V, 900mA, TO-92, Through Hole
Производитель Diodes
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel JFET with 100V drain-source voltage and 900mA continuous drain current. Features a maximum drain-source on-resistance of 500mR and a threshold voltage of 3V. This silicon MOSFET offers fast switching with turn-on delay of 8ns and fall time of 25ns. Operates across a wide temperature range from -55°C to 150°C, with 850mW power dissipation. Packaged in a TO-92 compatible E-line package for through-hole mounting.
RoHS Compliant
Mount Through Hole
Width 2.41mm
Height 4.01mm
Length 4.77mm
Weight 0.016oz
Polarity N-CHANNEL
Fall Time 25ns
Lead Free Lead Free
Packaging Bulk
Rds On Max 500mR
Package/Case TO-92-3
Current Rating 900mA
RoHS Compliant Yes
DC Rated Voltage 100V
Package Quantity 4000
Input Capacitance 350pF
Power Dissipation 850mW
Threshold Voltage 3V
Number of Channels 1
Number of Elements 1
Turn-On Delay Time 8ns
Radiation Hardening No
Turn-Off Delay Time 30ns
Reach SVHC Compliant No
Max Power Dissipation 850mW
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 650mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 900mA
Drain to Source Voltage (Vdss) 100V
Drain-source On Resistance-Max 500mR

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