ZVNL120ASTZ
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Краткое описание:
N-Channel JFET, 200V, 180mA, 10R, TO-92, Through Hole
Дополнительная информация
N-channel JFET, 200V drain-to-source breakdown voltage, 180mA continuous drain current, and 10 Ohm drain-to-source resistance. This single-element silicon transistor features a TO-92 compatible E-Line package, suitable for through-hole mounting. Operating across a wide temperature range from -55°C to 150°C, it offers a maximum power dissipation of 700mW. Key switching characteristics include an 8ns turn-on delay and 20ns turn-off delay, with an input capacitance of 85pF.
| RoHS | Not Compliant |
| Mount | Through Hole |
| Weight | 0.016oz |
| Polarity | N-CHANNEL |
| Fall Time | 8ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 10R |
| Package/Case | TO-92-3 |
| Current Rating | 180mA |
| RoHS Compliant | No |
| DC Rated Voltage | 200V |
| Package Quantity | 2000 |
| Input Capacitance | 85pF |
| Power Dissipation | 700mW |
| Number of Channels | 1 |
| Turn-On Delay Time | 8ns |
| Turn-Off Delay Time | 20ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 700mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 10R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 180mA |
| Drain to Source Voltage (Vdss) | 200V |
| Drain to Source Breakdown Voltage | 200V |
