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N-Channel MOSFET, 200V, 320mA, 10R, SOT-223
Дополнительная информация
N-Channel Silicon Metal-Oxide Semiconductor FET, a power field-effect transistor, features a 200V drain-to-source voltage (Vdss) and a continuous drain current (ID) of 320mA. This surface-mount device, housed in a SOT-223 package, offers a maximum drain-to-source resistance (Rds On) of 10 ohms. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 2W. Key switching characteristics include an 8ns turn-on delay and a 12ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.7mm |
| Height | 1.65mm |
| Length | 6.7mm |
| Weight | 0.000282oz |
| Polarity | N-CHANNEL |
| Fall Time | 12ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 10R |
| Package/Case | SOT-223 |
| Current Rating | 320mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 200V |
| Package Quantity | 4000 |
| Input Capacitance | 85pF |
| Power Dissipation | 2W |
| Number of Channels | 1 |
| Turn-On Delay Time | 8ns |
| Turn-Off Delay Time | 20ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 10R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 320mA |
| Drain to Source Voltage (Vdss) | 200V |
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