ZVP1320FTA
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Краткое описание:
P-Channel JFET, -200V, 35mA ID, 80R Rds(on), SOT-23
Дополнительная информация
P-channel silicon junction field-effect transistor (JFET) for small signal applications. Features a -200V drain-source voltage (Vdss) and a continuous drain current (ID) of 35mA. Offers a low drain-source on-resistance (Rds On) of 80 Ohms and a threshold voltage of -1.5V. Packaged in a SOT-23 surface mount case, this component boasts a 330mW power dissipation and operates within a temperature range of -55°C to 150°C. Includes 8ns turn-on and turn-off delay times.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.02mm |
| Length | 3.04mm |
| Weight | 0.000282oz |
| Polarity | P-CHANNEL |
| Fall Time | 8ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 80R |
| Package/Case | SOT-23 |
| Current Rating | -35mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | -200V |
| Package Quantity | 3000 |
| Input Capacitance | 50pF |
| Power Dissipation | 350mW |
| Threshold Voltage | -1.5V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 8ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 330mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 80R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 35mA |
| Drain to Source Voltage (Vdss) | -200V |
| Drain-source On Resistance-Max | 80R |
