ZVP2106ASTOB
Снят с производства
Краткое описание:
P-Channel JFET, 60V, 280mA, 5R Rds(on), TO-92
Дополнительная информация
P-channel, silicon, metal-oxide semiconductor field-effect transistor (MOSFET) designed for small signal applications. Features a 60V drain-to-source voltage (Vdss) and a continuous drain current (ID) of 280mA. Offers a low on-resistance (Rds On Max) of 5 Ohms and a gate-to-source voltage (Vgs) of 20V. Packaged in a TO-92 compatible E-Line package, suitable for through-hole mounting. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 700mW.
| RoHS | Compliant |
| Mount | Through Hole |
| Weight | 0.016oz |
| Polarity | P-CHANNEL |
| Fall Time | 15ns |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Rds On Max | 5R |
| Package/Case | TO-92-3 |
| Current Rating | -280mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | -60V |
| Package Quantity | 4000 |
| Input Capacitance | 100pF |
| Power Dissipation | 700mW |
| Number of Channels | 1 |
| Turn-On Delay Time | 7ns |
| Turn-Off Delay Time | 12ns |
| Max Power Dissipation | 700mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 5R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 280mA |
| Drain to Source Voltage (Vdss) | 60V |
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