ZVP2110A
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Краткое описание:
P-Channel JFET, 100V, 230mA, 8 Ohm, TO-92
Дополнительная информация
P-channel silicon junction field-effect transistor (JFET) designed for through-hole mounting in a TO-92 package. Features a continuous drain current of 230mA, a drain-source voltage rating of 100V, and a low drain-source on-resistance of 8 Ohms. Operates with a gate-source voltage up to 20V and a threshold voltage of -3.5V. Offers fast switching speeds with turn-on delay of 7ns and turn-off delay of 12ns. Rated for a maximum power dissipation of 700mW and operates across a temperature range of -55°C to 150°C.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.41mm |
| Height | 4.01mm |
| Length | 4.77mm |
| Weight | 0.016oz |
| Polarity | P-CHANNEL |
| Fall Time | 15ns |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Rds On Max | 8R |
| Package/Case | TO-92-3 |
| Current Rating | -230mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | -100V |
| Package Quantity | 4000 |
| Input Capacitance | 100pF |
| Threshold Voltage | -3.5V |
| Number of Channels | 1 |
| Turn-On Delay Time | 7ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 12ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 700mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 8R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 230mA |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 8R |
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