ZVP2120ASTZ
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Краткое описание:
P-Channel JFET, 200V, 120mA, TO-92, Through Hole
Дополнительная информация
P-channel JFET with 200V drain-source voltage and 120mA continuous drain current. Features 25 Ohm drain-source resistance, 20V gate-source voltage, and 700mW power dissipation. This silicon FET offers fast switching with turn-on delay of 7ns and fall time of 15ns. Packaged in a TO-92 compatible E-Line package for through-hole mounting, it operates from -55°C to 150°C and is lead-free and RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.41mm |
| Height | 4.01mm |
| Length | 4.77mm |
| Weight | 0.016oz |
| Polarity | P-CHANNEL |
| Fall Time | 15ns |
| Lead Free | Lead Free |
| Packaging | Cut Tape |
| Rds On Max | 25R |
| Package/Case | TO-92-3 |
| Current Rating | -120mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | -200V |
| Package Quantity | 2000 |
| Input Capacitance | 100pF |
| Number of Channels | 1 |
| Turn-On Delay Time | 7ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 12ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 700mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 25R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 120mA |
| Drain to Source Voltage (Vdss) | 200V |
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