ZVP4525E6TA
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P-Channel JFET, 250V, 197mA ID, SOT-23-6
Дополнительная информация
P-channel JFET for surface mount applications, featuring a 250V drain-source breakdown voltage and 197mA continuous drain current. This silicon metal-oxide semiconductor FET offers a low 14 Ohm drain-source on-resistance and operates within a -55°C to 150°C temperature range. Packaged in a SOT-23-6, it boasts fast switching speeds with turn-on delay of 1.53ns and fall time of 3.78ns. The component is RoHS and REACH SVHC compliant, with a maximum power dissipation of 1.1W.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.8mm |
| Height | 1.3mm |
| Length | 3.1mm |
| Weight | 0.000529oz |
| Polarity | P-CHANNEL |
| Fall Time | 3.78ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 14R |
| Package/Case | SOT-23-6 |
| Current Rating | -197mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | -250V |
| Package Quantity | 3000 |
| Input Capacitance | 73pF |
| Power Dissipation | 1.1W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 1.53ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 17.5ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 1.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 14R |
| Gate to Source Voltage (Vgs) | 40V |
| Continuous Drain Current (ID) | 197mA |
| Drain to Source Voltage (Vdss) | 250V |
| Drain-source On Resistance-Max | 14R |
| Drain to Source Breakdown Voltage | -250V |
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