ZVP4525GTA
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P-Channel JFET, 250V, 265mA, SOT-223, Surface Mount
Дополнительная информация
P-channel JFET for small signal applications, featuring a 250V drain-source voltage (Vdss) and 265mA continuous drain current (ID). This silicon MOSFET offers a maximum drain-source on-resistance (Rds On Max) of 14 Ohms and a gate-to-source voltage (Vgs) of 40V. Packaged in a SOT-223 surface-mount case, it operates within a temperature range of -55°C to 150°C with a 2W power dissipation. Includes fast switching times with turn-on delay of 1.53ns and fall time of 7.85ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.7mm |
| Height | 1.65mm |
| Length | 6.7mm |
| Weight | 0.000282oz |
| Polarity | P-CHANNEL |
| Fall Time | 7.85ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 14R |
| Package/Case | SOT-223 |
| Current Rating | -265mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | -250V |
| Package Quantity | 1000 |
| Input Capacitance | 73pF |
| Power Dissipation | 2W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 1.53ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 17.5ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 10R |
| Gate to Source Voltage (Vgs) | 40V |
| Continuous Drain Current (ID) | 265mA |
| Drain to Source Voltage (Vdss) | 250V |
| Drain-source On Resistance-Max | 14R |
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