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PNP BJT Transistor, 40V VCEO, 5.5A IC, 152MHz, SOT-89
Дополнительная информация
PNP bipolar junction transistor in SOT-89 package, featuring a 40V collector-emitter breakdown voltage and a continuous collector current of -5.5A. This silicon transistor offers a gain bandwidth product of 152MHz and a maximum power dissipation of 3W. Designed for surface mounting, it operates across a temperature range of -55°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 2.6mm |
| Height | 1.6mm |
| Length | 4.6mm |
| Weight | 0.001834oz |
| hFE Min | 200 |
| Polarity | PNP |
| Frequency | 152MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-89 |
| Current Rating | -5.5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -40V |
| Package Quantity | 1000 |
| Power Dissipation | 3W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Transition Frequency | 152MHz |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 5.5A |
| Max Power Dissipation | 3W |
| Gain Bandwidth Product | 152MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -7.5V |
| Continuous Collector Current | -5.5A |
| Collector Base Voltage (VCBO) | 50V |
| Collector-emitter Voltage-Max | 185mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
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