ZX5T851GTA
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Краткое описание:
NPN BJT 6A 60V 130MHz SOT-223 SM Transistor
Дополнительная информация
NPN bipolar junction transistor (BJT) for small signal applications, featuring a 6A continuous collector current and 60V collector-emitter breakdown voltage. This silicon transistor offers a 130MHz transition frequency and a minimum hFE of 55. Packaged in a SOT-223 surface-mount plastic package, it operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 3W.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.7mm |
| Height | 1.65mm |
| Length | 6.7mm |
| Weight | 0.000282oz |
| hFE Min | 55 |
| Polarity | NPN |
| Frequency | 130MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Termination | SMD/SMT |
| Package/Case | SOT-223 |
| Max Frequency | 130MHz |
| Current Rating | 6A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 1 |
| Power Dissipation | 3W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 130MHz |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 6A |
| Max Power Dissipation | 3W |
| Gain Bandwidth Product | 130MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 7V |
| Continuous Collector Current | 6A |
| Collector Base Voltage (VCBO) | 150V |
| Collector-emitter Voltage-Max | 260mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 260mV |
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