ZX5T955GTA
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PNP BJT Transistor, 140V, 4A, SOT-223, 120MHz
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) for surface mount applications. Features a maximum continuous collector current of -4A and a collector-emitter breakdown voltage of 140V. Offers a transition frequency of 120MHz and a maximum power dissipation of 3W. Packaged in a SOT-223 (TO-261AA) plastic/epoxy case with 4 pins, suitable for tape and reel packaging. Operates within a temperature range of -55°C to 150°C and is lead-free and RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.7mm |
| Height | 1.7mm |
| Length | 6.7mm |
| Weight | 0.000282oz |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-223 |
| Max Frequency | 120MHz |
| Current Rating | -4A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -140V |
| Package Quantity | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 120MHz |
| Max Breakdown Voltage | 140V |
| Max Collector Current | 4A |
| Max Power Dissipation | 3W |
| Gain Bandwidth Product | 120MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -7V |
| Continuous Collector Current | -4A |
| Collector Base Voltage (VCBO) | -180V |
| Collector-emitter Voltage-Max | 360mV |
| Collector Emitter Breakdown Voltage | 140V |
| Collector Emitter Saturation Voltage | -360mV |
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