ZXM61N02FTC
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Краткое описание:
N-Channel JFET, 20V, 1.7A ID, 180mR Rds(on), SOT-23
Дополнительная информация
N-channel silicon Metal-oxide Semiconductor Field-Effect Transistor (MOSFET) designed for small signal applications. Features a 20V Drain-to-Source Voltage (Vdss) and a continuous drain current (ID) of 1.7A. Offers a low Drain-to-Source On-Resistance (Rds On) of 180mR. Packaged in a SOT-23-3 surface-mount case, this 1-element transistor operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 806mW. Includes fast switching characteristics with turn-on delay time of 2.4ns and fall time of 4.2ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.02mm |
| Length | 3.04mm |
| Weight | 0.000282oz |
| Polarity | N-CHANNEL |
| Fall Time | 4.2ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 180mR |
| Package/Case | SOT-23-3 |
| Current Rating | 1.7A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 20V |
| Package Quantity | 10000 |
| Input Capacitance | 160pF |
| Power Dissipation | 806mW |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 2.4ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 7.8ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 625mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 180mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 1.7A |
| Drain to Source Voltage (Vdss) | 20V |
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